TIN DIFFUSION AND SEGREGATION IN GAAS PROCESSED WITH A PULSED RUBY-LASER

被引：5

作者：

GARCIA, BJ ^{[1
]}

MARTINEZ, J ^{[1
]}

PIQUERAS, J ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

FONTAINE, C ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.346267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tin-diffused GaAs layer samples, with mean concentrations larger than 1019 cm-3, were obtained by irradiating with a ruby laser GaAs substrates covered with thin tin layers. Mobilities between 100 and 200 cm2/V s were obtained. Both carrier concentration and mobility decrease with increasing energy density. Strong segregation effects were observed in the samples processed with large energy densities.

引用

页码：3832 / 3837

页数：6

共 16 条

[1]

Baker JC, 1970, THESIS MIT

[2]

CAHN JW, 1980, LASER ELECTRON BEAM, P89

[3]

CARNAHAN B, 1969, APPLIED NUMERICAL ME, P441

[4] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[5]

DAVID SA, 1981, LASERS METALLURGY, P247

[6] EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING [J].

DEUTSCH, TF ;

FAN, JCC ;

EHRLICH, DJ ;

TURNER, GW ;

CHAPMAN, RL ;

GALE, RP .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :722-724

[7] GE DIFFUSION INTO GAAS BY PULSED LASER IRRADIATION [J].

GARCIA, BJ ;

MARTINEZ, J ;

PIQUERAS, J ;

CASTANO, JL ;

MUNOZYAGUE, A .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 46 (03) :191-196

[8]

GARCIA BJ, IN PRESS APPL PHYS A

[9]

KAKAC S, 1985, HEAT CONDUCTION, pCH9

[10]

Kendall D. L., 1968, SEMICONDUCT SEMIMET, V4

← 1 2 →