GE DIFFUSION INTO GAAS BY PULSED LASER IRRADIATION

被引：7

作者：

GARCIA, BJ

MARTINEZ, J

PIQUERAS, J

CASTANO, JL

MUNOZYAGUE, A

机构：

[1] CTR NACL MICROELECTR, E-28006 MADRID, SPAIN

[2] CNRS, AUTOMAT & ANAL SYST LAB, F-31400 TOULOUSE, FRANCE

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 03期

关键词：

D O I：

10.1007/BF00939263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：191 / 196

页数：6

共 24 条

[1] ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES [J].

AMITH, A ;

KUDMAN, I ;

STEIGMEIER, EF .

PHYSICAL REVIEW, 1965, 138 (4A) :1270-+

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3] PHOTO-LUMINESCENCE OF MOLECULAR-BEAM EPITAXIALLY GROWN GE-DOPED GAAS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

CASTANO, JL ;

PIQUERAS, J .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2630-2634

[4]

BAUERLE D, 1986, CHEM PROCESSING LASE, pCH6

[5] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[6] PULSED LASER IRRADIATION OF GAAS UNDER OXYGEN AND SILANE ATMOSPHERE - INCORPORATION, LOSSES, INFLUENCE OF NATIVE OXIDE [J].

COHEN, C ;

SIEJKA, J ;

BERTI, M ;

DRIGO, AV ;

BENTINI, GG ;

PRIBAT, D ;

JANNITTI, E .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (11) :4081-4087

[7] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[8]

Davies D. E., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P247

[9] AN EXPERIMENTAL TEST OF GAAS DECOMPOSITION DUE TO PULSED LASER IRRADIATION [J].

DEJONG, T ;

WANG, ZL ;

SARIS, FW .

PHYSICS LETTERS A, 1982, 90 (03) :147-149

[10] EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING [J].

DEUTSCH, TF ;

FAN, JCC ;

EHRLICH, DJ ;

TURNER, GW ;

CHAPMAN, RL ;

GALE, RP .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :722-724

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