PULSED LASER IRRADIATION OF GAAS UNDER OXYGEN AND SILANE ATMOSPHERE - INCORPORATION, LOSSES, INFLUENCE OF NATIVE OXIDE

[1] 7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 481 - &

[2] A SIMPLE, DIGITALLY CONTROLLED, AUTOMATIC, HYSTERESIS FREE, HIGH-PRECISION ENERGY SCANNING SYSTEM FOR VAN DE GRAAF TYPE ACCELERATORS .1. PRINCIPLE, RESULTS AND APPLICATIONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 205 (1-2): : 5 - 26

[3] VAPORIZATION OF GAAS DURING LASER ANNEALING [J]. ELECTRONICS LETTERS, 1979, 15 (24) : 786 - 787

[4] EFFECT OF OXYGEN-PRESSURE ON OXYGEN INCORPORATION IN SI AND GA AS DURING Q-SWITCHED LASER IRRADIATION [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 229 - 234

[5] COHEN C, UNPUB J PHYS PARIS

[6] AN EXPERIMENTAL TEST OF GAAS DECOMPOSITION DUE TO PULSED LASER IRRADIATION [J]. PHYSICS LETTERS A, 1982, 90 (03) : 147 - 149

[7] EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 722 - 724

[8] Fletcher J., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P421

[9] FOGARASSY F, 1980, 3RD P E C PHOT SOL E, P369

[10] LASER OXIDATION OF GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) : L726 - L728

[1] 7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 481 - &

[2] A SIMPLE, DIGITALLY CONTROLLED, AUTOMATIC, HYSTERESIS FREE, HIGH-PRECISION ENERGY SCANNING SYSTEM FOR VAN DE GRAAF TYPE ACCELERATORS .1. PRINCIPLE, RESULTS AND APPLICATIONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 205 (1-2): : 5 - 26

[3] VAPORIZATION OF GAAS DURING LASER ANNEALING [J]. ELECTRONICS LETTERS, 1979, 15 (24) : 786 - 787

[4] EFFECT OF OXYGEN-PRESSURE ON OXYGEN INCORPORATION IN SI AND GA AS DURING Q-SWITCHED LASER IRRADIATION [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 229 - 234

[5] COHEN C, UNPUB J PHYS PARIS

[6] AN EXPERIMENTAL TEST OF GAAS DECOMPOSITION DUE TO PULSED LASER IRRADIATION [J]. PHYSICS LETTERS A, 1982, 90 (03) : 147 - 149

[7] EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 722 - 724

[8] Fletcher J., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P421

[9] FOGARASSY F, 1980, 3RD P E C PHOT SOL E, P369

[10] LASER OXIDATION OF GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) : L726 - L728