NUCLEATION CONTROLLED PHASE SELECTION IN VANADIUM AMORPHOUS-SILICON MULTILAYER THIN-FILMS

被引：22

作者：

CLEVENGER, LA ^{[1
]}

THOMPSON, CV ^{[1
]}

DEAVILLEZ, RR ^{[1
]}

MA, E ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576766

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cross-sectional transmission electron microscopy, isothermal and constant-heating-rate calorimetry, and thin film x-ray diffraction have been used to investigate amorphous and crystalline silicide phase formation in vanadium/amorphous silicon multilayer thin films. The atomic concentration ratio of the films was one V atom to two Si atoms and the modulation period was either 14 or 50 nm. The first silicide phase to form at the vanadium/amorphous silicon interface was amorphous-vanadium-silicide. Heating to temperatures above 750 K caused crystalline VSi2 to form at the amorphous-vanadium-sihcide/amorphous silicon interface. Analysis of cross-sectional transmission electron microscopy and both isothermal and constant-scan-rate calorimetric data suggest that nucleation barriers control the formation of crystalline VSi2. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1566 / 1571

页数：6

共 19 条

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