EFFECTS OF INTERFACE TRAPS ON THE TRANSCONDUCTANCE AND DRAIN CURRENT OF INP MISFETS

被引：5

作者：

CHEN, CL

CALAWA, AR

COURTNEY, WE

MAHONEY, LJ

PALMATEER, SC

MANFRA, MJ

HOLLIS, MA

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 08期

关键词：

D O I：

10.1109/16.144667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The drain current, transconductance, and output resistance of an InP MISFET are shown to depend strongly on the frequency and amplitude of an ac signal applied to the gate. This dependence exists even though the familiar long-term current drift effect is negligible. To explain this phenomenon a new nonequilibrium interface-trap model is proposed.

引用

页码：1797 / 1804

页数：8

共 12 条

[1]

ARMAND M, 1983, P CORNELL C ADV CONC, P218

[2] REDUCTION OF FAST INTERFACE STATES AND SUPPRESSION OF DRIFT PHENOMENA IN ARSENIC-STABILIZED METAL-INSULATOR-INP STRUCTURES [J].