TIN DIFFUSION FROM DOPED OXIDES FOR FABRICATING GAAS MICROWAVE DEVICES

被引：9

作者：

ARNOLD, N

DAEMBKES, H

HEIME, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：361 / 364

页数：4

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