PROPERTIES OF ZRNX PREPARED BY ION-ASSISTED DEPOSITION

被引:43
作者
NETTERFIELD, RP [1 ]
MARTIN, PJ [1 ]
MCKENZIE, DR [1 ]
机构
[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA
关键词
D O I
10.1007/BF00722192
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:972 / 974
页数:3
相关论文
共 17 条
  • [1] ION-STIMULATED SORPTION - AN ION-ASSISTED TECHNOLOGY WITH NEW POSSIBILITIES
    GRIGOROV, GI
    MARTEV, IN
    [J]. THIN SOLID FILMS, 1986, 143 (02) : 177 - 185
  • [2] Hofmann S., 1982, J TRACE MICROPROBE T, V1, P213
  • [3] Higher nitrides of hafnium, zirconium, and titanium synthesized by dual ion beam deposition
    Johansson, B. O.
    Hentzell, H. T. G.
    Harper, J. M. E.
    Cuomo, J. J.
    [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) : 442 - 451
  • [4] ZIRCONIUM NITRIDE FILMS PREPARED BY CATHODIC ARC PLASMA DEPOSITION PROCESS
    JOHNSON, PC
    RANDHAWA, H
    [J]. SURFACE & COATINGS TECHNOLOGY, 1987, 33 (1-4) : 53 - 62
  • [5] UBER EIN BRAUNES ZIRKONNITRID ZR3N4
    JUZA, R
    RABENAU, A
    NITSCHKE, I
    [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1964, 332 (1-2): : 1 - 4
  • [6] OPTICAL-PROPERTIES OF CVD-COATED TIN, ZRN AND HFN
    KARLSSON, B
    SHIMSHOCK, RP
    SERAPHIN, BO
    HAYGARTH, JC
    [J]. SOLAR ENERGY MATERIALS, 1983, 7 (04): : 401 - 411
  • [7] KARLSSON B, 1982, P SOC PHOTO-OPT INST, V324, P52, DOI 10.1117/12.933254
  • [8] SOME PROPERTIES OF ZIRCONIUM NITRIDE FORMED BY PLASMAS
    KONUMA, M
    MATSUMOTO, O
    [J]. JOURNAL OF THE LESS-COMMON METALS, 1977, 56 (01): : 129 - 132
  • [9] CHARACTERIZATION OF GROWING THIN-FILMS BY INSITU ELLIPSOMETRY, SPECTRAL REFLECTANCE AND TRANSMITTANCE MEASUREMENTS, AND ION-SCATTERING SPECTROSCOPY
    NETTERFIELD, RP
    MARTIN, PJ
    SAINTY, WG
    DUFFY, RM
    PACEY, CG
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1985, 56 (11) : 1995 - 2003
  • [10] GROWTH DYNAMICS OF ALUMINUM NITRIDE AND ALUMINUM-OXIDE THIN-FILMS SYNTHESIZED BY ION-ASSISTED DEPOSITION
    NETTERFIELD, RP
    MULLER, KH
    MCKENZIE, DR
    GOONAN, MJ
    MARTIN, PJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 760 - 769