BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)

被引：30

作者：

NAYAK, DK

USAMI, N

FUKATSU, S

SHIRAKI, Y

机构：

[1] Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Meguro-ku, Tokyo 153

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 25期

关键词：

D O I：

10.1063/1.110110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-quality completely relaxed SiGe buffer layer is grown on Si(100) by gas-source molecular-beam epitaxy. A pseudomorphic Si layer is grown on this relaxed SiGe buffer to form SiGe/strained-Si/SiGe type-II (staggered) quantum wells. Intense band-edge photoluminescence is observed from these quantum wells for the first time. The quantum confinement effect in SiGe/strained-Si/SiGe type-II quantum wells is demonstrated from the systematic shift of photoluminescence energy peaks with the width of the quantum well. Transitions from the strained-Si quantum well are identified as radiative recombination of excitons, which are confined into the quantum well.

引用

页码：3509 / 3511

页数：3

共 21 条

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