TECHNIQUE FOR INVESTIGATION OF DEEP-LEVEL STATES IN DIFFUSED P-N-JUNCTION DEVICES - APPLICATION TO GAAS ELECTROLUMINESCENT DIODES

被引：3

作者：

LO, W ^{[1
]}

YANG, ES ^{[1
]}

机构：

[1] COLUMBIA UNIV, DEPT ELECT ENGN & COMP SCI, NEW YORK, NY 10027 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 08期

关键词：

D O I：

10.1109/T-ED.1973.17729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：684 / 691

页数：8

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