REVERSE CURRENT AND CARRIER LIFETIME AS A FUNCTION OF TEMPERATURE IN SILICON JUNCTION DIODES

被引：21

作者：

PELL, EM

ROE, GM

机构：

来源：

关键词：

D O I：

10.1063/1.1722480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：768 / 772

页数：5

共 12 条

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[3] FULLER, 1954, PHYS REV, V96, P833
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[5] EINKRISTALLE UND PN-SCHICHTKRISTALLE AUS SILIZIUM
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MEIGS, PS
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[7] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM
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[8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
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MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
[9] REVERSE CURRENT AND CARRIER LIFETIME AS A FUNCTION OF TEMPERATURE IN GERMANIUM JUNCTION DIODES
PELL, EM
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 658 - 665
[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
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READ, WT
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