MODELING THE THRESHOLD VOLTAGE OF SHORT-CHANNEL SILICON-ON-INSULATOR MOSFETS

被引：6

作者：

IMAM, MA ^{[1
]}

OSMAN, MA ^{[1
]}

NINTUNZE, N ^{[1
]}

机构：

[1] WASHINGTON STATE UNIV,PULLMAN,WA 99164

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 05期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSISTORS; METALOXIDE-SEMICONDUCTOR STRUCTURES AND DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple analytical model for the threshold voltage of short-channel, thin-film, fully-depleted silicon-on-insulator MOSFETs is presented. The model is based on the analytical solution for the two-dimensional potential distribution in the silicon film, which is taken as the sum of the long-channel solution to the Poisson equation and the short-channel solution to the Laplace equation. The model shows close agreement with numerical PISCES simulation results. The equivalence between the proposed model and the parabolic model of Young is also proven.

引用

页码：474 / 475

页数：2

共 6 条

[1]

COLINGE JP, 1991, SILICON INSULATOR

[2] A QUASI-3D ANALYTICAL THRESHOLD VOLTAGE MODEL OF SMALL GEOMETRY MOSFETS [J].