A PHYSICAL SHORT-CHANNEL MODEL FOR THE THIN-FILM SOI MOSFET APPLICABLE TO DEVICE AND CIRCUIT CAD

被引：85

作者：

VEERARAGHAVAN, S ^{[1
]}

FOSSUM, JG ^{[1
]}

机构：

[1] UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 11期

关键词：

D O I：

10.1109/16.7399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1866 / 1875

页数：10

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