SCHOTTKY-BARRIER BEHAVIOR OF A TI-W ALLOY ON SI(100)

被引:16
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ABOELFOTOH, MO
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10.1063/1.337933
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O59 [应用物理学];
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页码:2558 / 2565
页数:8
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[1]   SCHOTTKY-BARRIER HEIGHT OF A TI-W ALLOY ON N-TYPE AND P-TYPE SI [J].
ABOELFOTOH, MO ;
TU, KN .
PHYSICAL REVIEW B, 1986, 33 (10) :6572-6578
[2]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[3]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[4]   TITANIUM-TUNGSTEN CONTACTS TO SI - THE EFFECTS OF ALLOYING ON SCHOTTKY CONTACT AND ON SILICIDE FORMATION [J].
BABCOCK, SE ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6898-6905
[5]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[6]   TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J].
BLUDAU, W ;
ONTON, A ;
HEINKE, W .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1846-1848
[7]   TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263
[8]   CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].
BUTZ, R ;
RUBLOFF, GW ;
HO, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775
[9]   NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].
CHEUNG, NW ;
CULBERTSON, RJ ;
FELDMAN, LC ;
SILVERMAN, PJ ;
WEST, KW ;
MAYER, JW .
PHYSICAL REVIEW LETTERS, 1980, 45 (02) :120-124
[10]   THE FORMATION OF THE SCHOTTKY-BARRIER AT THE V/SI INTERFACE [J].
CLABES, JG ;
RUBLOFF, GW ;
REIHL, B ;
PURTELL, RJ ;
HO, PS ;
ZARTNER, A ;
HIMPSEL, FJ ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :684-687