A NEW TECHNIQUE FOR MEASURING MOSFET INVERSION LAYER MOBILITY

We present a new experimental technique to accurately determine both the inversion charge Q(i) and the channel mobility mu of a MOSFET. With this new technique, the inversion charge is measured as a function of the gate and drain voltages. This improvement allows the channel mobility to be extracted independent of drain voltage V(DS) over a wide range of voltages (V(DS) = 20-100 mV). The resulting mu (V(GS)) curves for different V(DS) show no drastic mobility roll-off at V(GS) near V(TH). This suggests that the roll-off seen in the mobility data extracted using the split C-V method is probably due to inaccurate inversion charge measurements instead of Coulombic scattering.