CALCULATION OF CORE STRUCTURE AND CORE ENERGY OF SCREW AND 60-DEGREES DISLOCATIONS IN SI - TIGHT-BINDING METHOD

被引：7

作者：

MASUDA, KI ^{[1
]}

KOJIMA, K ^{[1
]}

机构：

[1] YOKOHAMA CITY UNIV,DEPT PHYS,KANAZAWA KU,YOKOHAMA 236,JAPAN

来源：

关键词：

D O I：

10.1143/JPSJ.51.1510

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1510 / 1515

页数：6

共 23 条

[1] Alexander H, 1974, J PHYS C SOLID STATE, VC7, P173
[2] CHEMICAL PSEUDOPOTENTIAL APPROACH TO COVALENT BONDING .2. BOND LENGTHS AND BOND-ENERGIES IN DIAMOND, SILICON AND GRAPHITE
BULLETT, DW
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (17): : 2707 - 2714
[3] DISSOCIATION OF NEAR-SCREW DISLOCATIONS IN GERMANIUM AND SILICON
GOMEZ, A
COCKAYNE, DJ
HIRSCH, PB
VITEK, V
[J]. PHILOSOPHICAL MAGAZINE, 1975, 31 (01): : 105 - 113
[4] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS
GOTTSCHALK, H
PATZER, G
ALEXANDER, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01): : 207 - 217
[5] HARADA H, 1980, RES HIGH TEMPERATURE, P138
[6] TOTAL ENERGIES IN THE TIGHT-BINDING THEORY
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1981, 23 (10) : 5230 - 5245
[7] HOSHINO T, UNPUB SOLID STATE CO
[8] THE STRUCTURE OF KINKS ON THE 90-DEGREES PARTIAL IN SILICON AND A STRAINED-BOND MODEL FOR DISLOCATION-MOTION
JONES, R
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02): : 213 - 219
[9] COMMENT ON ELECTRONIC-STRUCTURE OF NEUTRAL VACANCY IN SILICON
KAUFFER, E
PECHEUR, P
GERL, M
[J]. PHYSICAL REVIEW B, 1977, 15 (08): : 4107 - 4108
[10] CALCULATION OF ENERGY-LEVELS OF A NEUTRAL VACANCY AND OF SELF-INTERSTITIALS IN SILICON
KAUFFER, E
PECHEUR, P
GERL, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12): : 2319 - 2330