A STRUCTURAL INVESTIGATION OF SOME EVAPORATED SiOx FILMS

被引：4

作者：

Forty, A. J. ^{[1
]}

Kerkar, M. ^{[1
]}

Robinson, J. ^{[1
]}

El-Mashri, S. M. ^{[2
]}

Farrabaugh, E. N. ^{[3
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Atom Energy Commiss, Tripoli, Libya

[3] Natl Bur Stand, Washington, DC 20234 USA

来源：

JOURNAL DE PHYSIQUE | 1986年 / 47卷 / C-8期

关键词：

D O I：

10.1051/jphyscol:19868165

中图分类号：

学科分类号：

摘要：

The structure of thin SiOx films formed by the electron beam evaporation of silicon, or silica, on to heated mica substrates in various partial pressures of oxygen has been investigated using both EXAFS, at the Si K edge, and X-ray photoelectron spectroscopy. The data obtained from these studies are consistent with the random mixture model for the structure of SiOx and inconsistent with the random bond model.

引用

页码：325 / 328

页数：4

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