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RATIONAL DESIGN GUNN- AND LSA-DIODE ELECTRODES
被引:1
作者
:
DENKER, SP
论文数:
0
引用数:
0
h-index:
0
DENKER, SP
机构
:
来源
:
ELECTRONICS LETTERS
|
1968年
/ 4卷
/ 14期
关键词
:
D O I
:
10.1049/el:19680226
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:294 / +
页数:1
相关论文
共 9 条
[1]
LSA OSCILLATOR-DIODE THEORY
[J].
COPELAND, JA
论文数:
0
引用数:
0
h-index:
0
COPELAND, JA
.
JOURNAL OF APPLIED PHYSICS,
1967,
38
(08)
:3096
-+
[2]
ALLOYED SEMICONDUCTOR HETEROJUNCTIONS
[J].
DALE, JR
论文数:
0
引用数:
0
h-index:
0
DALE, JR
.
PHYSICA STATUS SOLIDI,
1966,
16
(02)
:351
-&
[3]
COMPETING DETECTION MECHANISMS IN HOT CARRIER MICROWAVE DIODES
[J].
DENKER, SP
论文数:
0
引用数:
0
h-index:
0
DENKER, SP
;
SCARINGELLA, D
论文数:
0
引用数:
0
h-index:
0
SCARINGELLA, D
.
SOLID-STATE ELECTRONICS,
1967,
10
(08)
:777
-+
[4]
PROPERTIES OF A FREE STEADILY TRAVELLING ELECTRICAL DOMAIN IN GAAS
[J].
GUNN, JB
论文数:
0
引用数:
0
h-index:
0
GUNN, JB
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1966,
10
(04)
:300
-+
[5]
HEIJNE L, 1961, PHILIPS RES REP S, V4, P4
[6]
NONLINEAR SPACE-CHARGE DOMAIN DYNAMICS IN A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:27
-+
[7]
THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
[J].
MCCUMBER, DE
论文数:
0
引用数:
0
h-index:
0
MCCUMBER, DE
;
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:4
-+
[8]
METAL-SEMICONDUCTOR SURFACE BARRIERS
[J].
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
.
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
:1023
-&
[9]
BEHAVIOR OF GERMANIUM IN GALLIUM ARSENIDE
[J].
VIELAND, LJ
论文数:
0
引用数:
0
h-index:
0
VIELAND, LJ
;
SEIDEL, T
论文数:
0
引用数:
0
h-index:
0
SEIDEL, T
.
JOURNAL OF APPLIED PHYSICS,
1962,
33
(08)
:2414
-&
←
1
→
共 9 条
[1]
LSA OSCILLATOR-DIODE THEORY
[J].
COPELAND, JA
论文数:
0
引用数:
0
h-index:
0
COPELAND, JA
.
JOURNAL OF APPLIED PHYSICS,
1967,
38
(08)
:3096
-+
[2]
ALLOYED SEMICONDUCTOR HETEROJUNCTIONS
[J].
DALE, JR
论文数:
0
引用数:
0
h-index:
0
DALE, JR
.
PHYSICA STATUS SOLIDI,
1966,
16
(02)
:351
-&
[3]
COMPETING DETECTION MECHANISMS IN HOT CARRIER MICROWAVE DIODES
[J].
DENKER, SP
论文数:
0
引用数:
0
h-index:
0
DENKER, SP
;
SCARINGELLA, D
论文数:
0
引用数:
0
h-index:
0
SCARINGELLA, D
.
SOLID-STATE ELECTRONICS,
1967,
10
(08)
:777
-+
[4]
PROPERTIES OF A FREE STEADILY TRAVELLING ELECTRICAL DOMAIN IN GAAS
[J].
GUNN, JB
论文数:
0
引用数:
0
h-index:
0
GUNN, JB
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1966,
10
(04)
:300
-+
[5]
HEIJNE L, 1961, PHILIPS RES REP S, V4, P4
[6]
NONLINEAR SPACE-CHARGE DOMAIN DYNAMICS IN A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:27
-+
[7]
THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
[J].
MCCUMBER, DE
论文数:
0
引用数:
0
h-index:
0
MCCUMBER, DE
;
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
:4
-+
[8]
METAL-SEMICONDUCTOR SURFACE BARRIERS
[J].
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
.
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
:1023
-&
[9]
BEHAVIOR OF GERMANIUM IN GALLIUM ARSENIDE
[J].
VIELAND, LJ
论文数:
0
引用数:
0
h-index:
0
VIELAND, LJ
;
SEIDEL, T
论文数:
0
引用数:
0
h-index:
0
SEIDEL, T
.
JOURNAL OF APPLIED PHYSICS,
1962,
33
(08)
:2414
-&
←
1
→