RATIONAL DESIGN GUNN- AND LSA-DIODE ELECTRODES

被引:1
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DENKER, SP
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10.1049/el:19680226
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:294 / +
页数:1
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共 9 条
[1]   LSA OSCILLATOR-DIODE THEORY [J].
COPELAND, JA .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3096-+
[2]   ALLOYED SEMICONDUCTOR HETEROJUNCTIONS [J].
DALE, JR .
PHYSICA STATUS SOLIDI, 1966, 16 (02) :351-&
[3]   COMPETING DETECTION MECHANISMS IN HOT CARRIER MICROWAVE DIODES [J].
DENKER, SP ;
SCARINGELLA, D .
SOLID-STATE ELECTRONICS, 1967, 10 (08) :777-+
[5]  
HEIJNE L, 1961, PHILIPS RES REP S, V4, P4
[7]   THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].
MCCUMBER, DE ;
CHYNOWETH, AG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+
[8]   METAL-SEMICONDUCTOR SURFACE BARRIERS [J].
MEAD, CA .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&
[9]   BEHAVIOR OF GERMANIUM IN GALLIUM ARSENIDE [J].
VIELAND, LJ ;
SEIDEL, T .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2414-&