A DAMAGE-FREE PERFECT PLANARIZATION METHOD USING BIAS-SPUTTERED SIO2

被引：9

作者：

HAZUKI, Y

MORIYA, T

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1987.22973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：628 / 632

页数：5

共 13 条

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