DEGRADATION INDUCED FORMATION OF EXTENDED DEFECTS IN GAP-N LEDS

被引：22

作者：

FERENCZI, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 04期

关键词：

D O I：

10.1109/T-ED.1981.20358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：421 / 424

页数：4

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[9] DEFECT CENTERS AND DEGRADATION OF GAP-N LEDS [J].

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