DEFECT STRUCTURE INDUCED DURING FORWARD-BIAS DEGRADATION OF GAP GREEN-LIGHT-EMITTING DIODES

被引：55

作者：

PETROFF, PM ^{[1
]}

LORIMOR, OG ^{[1
]}

RALSTON, JM ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.322774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1583 / 1588

页数：6

相关论文

共 20 条

[1] EFFECT OF DISLOCATIONS ON GREEN ELECTROLUMINESCENCE EFFICIENCY IN GAP GROWN BY LIQUID-PHASE EPITAXY
BRANTLEY, WA
LORIMOR, OG
DAPKUS, PD
HASZKO, SE
SAUL, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2629 - 2637
[2] DEFECTS IN EPITAXIAL GALLIUM PHOSPHIDE LAYERS
BROWN, AS
SPRINGTHORPE, AJ
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (02): : 495 - +
[3] MINORITY-CARRIER LIFETIMES AND LUMINESCENCE EFFICIENCIES IN NITROGEN-DOPED GAP
DAPKUS, PD
HACKETT, WH
LORIMOR, OG
KAMMLOTT, GW
HASZKO, SE
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 227 - 229
[4] PERMANENT DEGRADATION OF GAAS TUNNEL DIODES
GOLD, RD
WEISBERG, LR
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (11) : 811 - 821
[5] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS
HARTMAN, RL
HARTMAN, AR
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 147 - 149
[6] RELIABILITY OF DH GAAS LASERS AT ELEVATED-TEMPERATURES
HARTMAN, RL
DIXON, RW
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (05) : 239 - 242
[7] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES
HARTMAN, RL
SCHWARTZ, B
KUHN, M
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (07) : 304 - &
[8] HARTMAN RL, 1972, P IEEE, V89
[9] JORDAN AK, UNPUBLISHED
[10] INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS
KIMERLING, LC
PETROFF, P
LEAMY, HJ
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (06) : 297 - 300