SIZE DEPENDENCE OF THE THERMAL BROADENING OF THE EXCITON LINEWIDTH IN GAAS/GA0.7AL0.3AS SINGLE QUANTUM-WELLS

被引:66
作者
QIANG, H
POLLAK, FH
TORRES, CMS
LEITCH, W
KEAN, AH
STROSCIO, MA
IAFRATE, GJ
KIM, KW
机构
[1] UNIV GLASGOW, DEPT ELECTR & ELECT ENGN, NANOELECTR RES CTR, GLASGOW G12 8QQ, SCOTLAND
[2] USA, RES OFF, RES TRIANGLE PK, NC 27709 USA
[3] N CAROLINA STATE UNIV, DEPT ELECT ENGN, RALEIGH, NC 27696 USA
[4] CUNY GRAD SCH & UNIV CTR, NEW YORK, NY 10036 USA
关键词
D O I
10.1063/1.107554
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the temperature dependence of the linewidth, GAMMA(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga0.7Al0.3As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton-longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced.
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页码:1411 / 1413
页数:3
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