EXCITATION SPECTRUM OF BORON IN SILICON UNDER UNIAXIAL STRESS

被引：9

作者：

FISHER, P

RAMDAS, AK

机构：

来源：

PHYSICS LETTERS | 1965年 / 16卷 / 01期

关键词：

D O I：

10.1016/0031-9163(65)90384-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：26 / &

共 8 条

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BURSTEIN, E ;

BELL, EE ;

DAVISSON, JW ;

LAX, M .

[2] INFRARED ABSORPTION LINES IN BORON-DOPED SILICON [J].

COLBOW, K .

[3] INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

[4] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

MENDELSON, KS ;

JAMES, HM .

ROSEINNES, AC .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (466) :514-522

[7] THEORY OF SHALLOW ACCEPTOR STATES IN SI AND GE [J].

SCHECHTER, D .

[8]

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