ENHANCEMENT OF HIGH-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED SI1-XGEX/SI HETEROSTRUCTURES BY SURFACE PASSIVATION

被引：18

作者：

STAMOUR, A ^{[1
]}

STURM, JC ^{[1
]}

LACROIX, Y ^{[1
]}

THEWALT, MLW ^{[1
]}

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY,BC V5A 1S6,CANADA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 26期

关键词：

D O I：

10.1063/1.112386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence from strained Si1-xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high-temperature photoluminescence of Si1-xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1-xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1-xGex. By applying proper conditions, nearly constant Si1-xGex photoluminescence can be achieved from 77 to 250 K. © 1994 American Institute of Physics.

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页码：3344 / 3346

页数：3

相关论文

共 14 条

[1] EXCITONIC PHOTOLUMINESCENCE FROM SI-CAPPED STRAINED SI1-XGEX LAYERS [J].

DUTARTRE, D ;

BREMOND, G ;

SOUIFI, A ;

BENYATTOU, T .

PHYSICAL REVIEW B, 1991, 44 (20) :11525-11527

[2] LUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY [J].

FUKATSU, S ;

USAMI, N ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3B) :1502-1507

[3]

GAIL M, 1993, MATER RES SOC SYMP P, V298, P21, DOI 10.1557/PROC-298-21

[4] ROOM-TEMPERATURE 1.3-MU-M ELECTROLUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS [J].

MI, Q ;

XIAO, X ;

STURM, JC ;

LENCHYSHYN, LC ;

THEWALT, MLW .

APPLIED PHYSICS LETTERS, 1992, 60 (25) :3177-3179

[5]

Muller RS, 1986, DEVICE ELECT INTEGRA, P229

[6] LUMINESCENCE ORIGINS IN MOLECULAR-BEAM EPITAXIAL SI1-XGEX [J].

NOEL, JP ;

ROWELL, NL ;

HOUGHTON, DC ;

WANG, A ;

PEROVIC, DD .

APPLIED PHYSICS LETTERS, 1992, 61 (06) :690-692

[7] ELECTROLUMINESCENCE FROM A PSEUDOMORPHIC SI0.8GE0.2 ALLOY [J].

ROBBINS, DJ ;

CALCOTT, P ;

LEONG, WY .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1350-1352

[8] WELL-RESOLVED BAND-EDGE PHOTOLUMINESCENCE OF EXCITONS CONFINED IN STRAINED SI1-XGEX QUANTUM-WELLS [J].

STURM, JC ;

MANOHARAN, H ;

LENCHYSHYN, LC ;

THEWALT, MLW ;

ROWELL, NL ;

NOEL, JP ;

HOUGHTON, DC .

PHYSICAL REVIEW LETTERS, 1991, 66 (10) :1362-1365

[9] GROWTH OF SI1-XGEX BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION AND APPLICATION TO HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

STURM, JC ;

SCHWARTZ, PV ;

PRINZ, EJ ;

MANOHARAN, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2011-2016

[10] HIGH-TEMPERATURE (77-300-K) PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN SI/SI1-XGEX HETEROSTRUCTURES [J].

STURM, JC ;

STAMOUR, A ;

MI, Q ;

LENCHYSHYN, LC ;

THEWALT, MLW .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B) :2329-2334