HIGH-TEMPERATURE (77-300-K) PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN SI/SI1-XGEX HETEROSTRUCTURES

被引：18

作者：

STURM, JC ^{[1
]}

STAMOUR, A ^{[1
]}

MI, Q ^{[1
]}

LENCHYSHYN, LC ^{[1
]}

THEWALT, MLW ^{[1
]}

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4B期

关键词：

SILICON-GERMANIUM; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; ELECTRON-HOLE PLASMA; LIGHT-EMITTING DIODE (LED); STRAINED SI1-XGEX/SI QUANTUM WELLS;

D O I：

10.1143/JJAP.33.2329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photo- and electro-luminescence of strained Si1-xGex/Si heterostructures on Si(100) substrates from 77 K to 300 K has been investigated both experimentally and by quantitative modelling. The key experimental features are very broad linewidths and an exponential drop in the luminescence at high temperatures, with a larger Ge fraction corresponding to a higher temperature before the drop begins. These phenomena were accurately explained by an electron-hole plasma from high carrier densities in the quantum well and by an excessively low effective lifetime in the silicon cladding region.

引用

页码：2329 / 2334

页数：6

共 22 条

[1]

[Anonymous], 1990, METAL INSULATOR TRAN

[2] ELECTRON-HOLE PLASMA IN PHOTO-EXCITED INDIRECT-GAP ALXGA1-XAS [J].