FABRICATION OF A GRATING PATTERN WITH SUBMICROMETER DIMENSION IN SILICON CRYSTAL BY ION-BOMBARDMENT-ENHANCED ETCHING

被引：14

作者：

MORIWAKI, K

MASUDA, N

ARITOME, H

NAMBA, S

机构：

[1] Osaka University, Toyonaka, Osaka, 560, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 03期

关键词：

D O I：

10.1143/JJAP.19.491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：491 / 494

页数：4

共 10 条

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APPLIED PHYSICS LETTERS, 1969, 15 (04) :117-+

[3] DIFFERENTIAL ETCHING OF ION-IMPLANTED GARNET [J].

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NORTH, JC ;

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[4] MICROFABRICATION IN LINBO3 BY ION-BOMBARDMENT-ENHANCED ETCHING [J].

KAWABE, M ;

KUBOTA, M ;

MASUDA, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :1096-1098

[5] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON [J].

MAZEY, DJ ;

NELSON, RS ;

BARNES, RS .

PHILOSOPHICAL MAGAZINE, 1968, 17 (150) :1145-&

[6]

Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[7]

PICRAUX ST, 1975, RAD EFF, V7, P101

[8]

TSURUSHIMA T, 1977, 8TH S ION IMPL SUBM, P89

[9]

TSURUSHIMA T, 1976, T I ELECT ENG JPN A, V51, P527

[10]

WINTERBON KB, 1957, ION IMPLANTATION RAN, V2

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