HALL COEFFICIENT IN GERMANIUM

被引:13
作者
HARMAN, TC
WILLARDSON, RK
BEER, AC
机构
来源
PHYSICAL REVIEW | 1954年 / 94卷 / 04期
关键词
D O I
10.1103/PhysRev.94.1065.2
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1065 / 1067
页数:3
相关论文
共 9 条
[1]   SOME PROPERTIES OF HIGH RESISTIVITY P-TYPE GERMANIUM [J].
DUNLAP, WC .
PHYSICAL REVIEW, 1950, 79 (02) :286-292
[2]  
DUNLAP WC, 1951, PHYS REV, V82, P329
[3]  
DUNLAP WC, 1947, PHYS REV, V71, P471
[5]   CURRENT CARRIER MOBILITY RATIO IN SEMICONDUCTORS [J].
HUNTER, LP .
PHYSICAL REVIEW, 1953, 91 (03) :579-581
[6]   CURRENT CARRIER LIFETIMES DEDUCED FROM HALL COEFFICIENT AND RESISTIVITY MEASUREMENTS [J].
HUNTER, LP ;
HUIBREGTSE, EJ ;
ANDERSON, RL .
PHYSICAL REVIEW, 1953, 91 (06) :1315-1320
[7]   THEORY OF THE MAGNETORESISTIVE EFFECT IN SEMICONDUCTORS [J].
JOHNSON, VA ;
WHITESELL, WJ .
PHYSICAL REVIEW, 1953, 89 (05) :941-947
[8]   DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J].
PRINCE, MB .
PHYSICAL REVIEW, 1953, 92 (03) :681-687
[9]  
WILSON AH, 1953, THEORY METALS, pCH8