AMORPHIZATION PROCESSES AND STRUCTURAL RELAXATION IN ION-IMPLANTED SI

被引：6

作者：

MOTOOKA, T ^{[1
]}

KOBAYASHI, F ^{[1
]}

HIROYAMA, Y ^{[1
]}

TOKUYAMA, T ^{[1
]}

WEI, L ^{[1
]}

TANIGAWA, S ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

SILICON; ION IMPLANTATION; AMORPHIZATION; STRUCTURAL RELAXATION; RAMAN SPECTROSCOPY; POSITRON ANNIHILATION;

D O I：

10.1143/JJAP.32.318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphization processes in Si+, P+, Ge+, and As+ ion implanted Si as well as structural relaxation of amorphous Si (a-Si) during low-temperature (200-450-degrees-C) annealing have been investigated using Raman spectroscopy and depth-resolved positron annihilation spectroscopy. Based on the analysis of bond angle deviation DELTAtheta derived from the a-Si Raman TO peak width and line-shape parameter, the S parameter, obtained by the positron annihilation measurements, we have proposed that (1) amorphization is controlled by ion-beam-induced divacancy concentration; and (2) there exist microvoids in the a-Si layers and during isothermal annealing, both of DELTAtheta and the S parameter do not decrease monotonically but show an increase after the initial decrease due to dissociation of the microvoids.

引用

页码：318 / 321

页数：4

共 9 条

[1] STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J].