SELECTIVE SILICON EPITAXIAL-GROWTH AT 800-DEGREES-C BY ULTRALOW-PRESSURE CHEMICAL VAPOR-DEPOSITION USING SIH4 AND SIH4/H2

被引：40

作者：

YEW, TR ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342796

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2500 / 2507

页数：8

共 27 条

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