HOT-JET ETCHING OF PB, GAAS, AND SI

[1] DITTMER G, 1977, PHILIPS RES REP, V32, P341

[2] HOT JET ETCHING OF GAAS AND SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 315 - 317

[3] Triphenyl methyl, a case of trivalent carbon. (Introductory annoucement.) [J]. BERICHTE DER DEUTSCHEN CHEMISCHEN GESELLSCHAFT, 1900, 33 : 3150 - 3163

[4] KOHL WH, 1967, HDB MATERIALS TECHNI, P478

[5] HIGH-TEMPERATURE KINETICS OF REFRACTORY-METAL GASIFICATION BY ATOMIC FLUORINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 498 - 508

[6] MASKED ION-BEAM LITHOGRAPHY FOR SUBMICROMETER-GATE-LENGTH TRANSISTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 215 - 218

[7] PYROLYSIS OF N-BUTANE [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 270 (1341): : 267 - &

[8] ROSENER DE, 1971, J PHYS CHEM, V75, P308

[9] STEACIE EWR, 1954, ATOMIC FREE RADICAL

[1] DITTMER G, 1977, PHILIPS RES REP, V32, P341

[2] HOT JET ETCHING OF GAAS AND SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 315 - 317

[3] Triphenyl methyl, a case of trivalent carbon. (Introductory annoucement.) [J]. BERICHTE DER DEUTSCHEN CHEMISCHEN GESELLSCHAFT, 1900, 33 : 3150 - 3163

[4] KOHL WH, 1967, HDB MATERIALS TECHNI, P478

[5] HIGH-TEMPERATURE KINETICS OF REFRACTORY-METAL GASIFICATION BY ATOMIC FLUORINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 498 - 508

[6] MASKED ION-BEAM LITHOGRAPHY FOR SUBMICROMETER-GATE-LENGTH TRANSISTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 215 - 218

[7] PYROLYSIS OF N-BUTANE [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 270 (1341): : 267 - &

[8] ROSENER DE, 1971, J PHYS CHEM, V75, P308

[9] STEACIE EWR, 1954, ATOMIC FREE RADICAL