MASKED ION-BEAM LITHOGRAPHY FOR SUBMICROMETER-GATE-LENGTH TRANSISTORS

被引：17

作者：

PANG, SW

LYSZCZARZ, TM

CHEN, CL

DONNELLY, JP

RANDALL, JN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：215 / 218

页数：4

共 10 条

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[2] LOW RESISTANCE PD/GE/AU AND GE/PD/AU OHMIC CONTACTS TO NORMAL-TYPE GAAS
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[3] SURFACE DAMAGE ON GAAS INDUCED BY REACTIVE ION ETCHING AND SPUTTER ETCHING
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 784 - 787
[4] HIGH-RESOLUTION ION-BEAM LITHOGRAPHY AT LARGE GAPS USING STENCIL MASKS
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FLANDERS, DC
ECONOMOU, NP
DONNELLY, JP
BROMLEY, EI
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 457 - 459
[5] LINEWIDTH CONTROL WITH MASKED ION-BEAM LITHOGRAPHY USING STENCIL MASKS
RANDALL, JN
BROMLEY, EI
ECONOMOU, NP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 10 - 14
[6] THE THERMOMECHANICAL STABILITY OF ION-BEAM MASKS
RANDALL, JN
SIVASANKAR, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 223 - 227
[7] MASKED ION-BEAM RESIST EXPOSURE USING GRID SUPPORT STENCIL MASKS
RANDALL, JN
FLANDERS, DC
ECONOMOU, NP
DONNELLY, JP
BROMLEY, EI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 58 - 61
[8] SLAYMAN CW, 1982, P SOC PHOTO-OPT INST, V333, P168, DOI 10.1117/12.933430
[9] SMITH B, 1977, ION INPLANTATION RAN
[10] Williams R. E., 1984, GALLIUM ARSENIDE PRO