HIGH-RESOLUTION ION-BEAM LITHOGRAPHY AT LARGE GAPS USING STENCIL MASKS

被引：39

作者：

RANDALL, JN

FLANDERS, DC

ECONOMOU, NP

DONNELLY, JP

BROMLEY, EI

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.93969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：457 / 459

页数：3

共 16 条

[1] DRY DEVELOPMENT OF ION-BEAM EXPOSED PMMA RESIST [J].

ADESIDA, I ;

CHINN, JD ;

RATHBUN, L ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :666-671

[2] MASKED ION-BEAM LITHOGRAPHY - A FEASIBILITY DEMONSTRATION FOR SUBMICROMETER DEVICE FABRICATION [J].

BARTELT, JL ;

SLAYMAN, CW ;

WOOD, JE ;

CHEN, JY ;

MCKENNA, CM ;

MINNING, CP ;

COAKLEY, JF ;

HOLMAN, RE ;

PERRYGO, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1166-1171

[3]

BOHLEN H, 1978, 8TH P S EL ION BEAM, P406

[4] HIGH-RESOLUTION ION-BEAM LITHOGRAPHY [J].

ECONOMOU, NP ;

FLANDERS, DC ;

DONNELLY, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1172-1175

[5] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES [J].

FLANDERS, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1615-1619

[6] 400-A HIGH ASPECT-RATIO LINES PRODUCED IN POLYMETHYL METHACRYLATE (PMMA) BY ION-BEAM EXPOSURE [J].

KARAPIPERIS, L ;

LEE, CA .

APPLIED PHYSICS LETTERS, 1979, 35 (05) :395-397

[7] ION-BEAM EXPOSURE OF RESIST MATERIALS [J].

KOMURO, M ;

ATODA, N ;

KAWAKATSU, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) :483-490

[8] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J].

LEHMANN, HW ;

WIDMER, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :319-326

[9] ION-BEAM LITHOGRAPHY FOR IC-FABRICATION WITH SUBMICROMETER FEATURES [J].

RENSCH, DB ;

SELIGER, RL ;

CSANKY, G ;

OLNEY, RD ;

STOVER, HL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1897-1900

[10] ION-BEAM SENSITIVITY OF POLYMER RESISTS [J].

RYSSEL, H ;

HABERGER, K ;

KRANZ, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1358-1362

← 1 2 →