PREPARATION OF STABLE AND PHOTOCONDUCTIVE HYDROGENATED AMORPHOUS-SILICON FROM A XE-DILUTED SILANE PLASMA

被引：33

作者：

MATSUDA, A

MASHIMA, S

HASEZAKI, K

SUZUKI, A

YAMASAKI, S

MCELHENY, PJ

机构：

[1] Electrotechnical Laboratory, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 22期

关键词：

D O I：

10.1063/1.104854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconductive and stable hydrogenated amorphous silicon thin films, prepared by plasma-enhanced chemical vapor deposition using a Xe-silane mixture at a substrate temperature of 250-degrees-C, did not show any photo-induced degradation of the photoconductivity after 10(4) min light soaking (air mass-1, 100 mW/cm2). The network structure of these films is inhomogeneous and includes a large amount of clustered hydrogen as indicated by the low-temperature thermal effusion and the large, broad component in the nuclear magnetic resonance spectrum.

引用

页码：2494 / 2496

页数：3

共 13 条

[1] REDUCED LIGHT-INDUCED-CHANGES OF PHOTOCONDUCTIVITY IN DEUTERATED AMORPHOUS-SILICON [J].