REDUCED LIGHT-INDUCED-CHANGES OF PHOTOCONDUCTIVITY IN DEUTERATED AMORPHOUS-SILICON

被引：24

作者：

GANGULY, G ^{[1
]}

SUZUKI, A ^{[1
]}

YAMASAKI, S ^{[1
]}

NOMOTO, K ^{[1
]}

MATSUDA, A ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The light-induced decrease of the photoconductivity in deuterated amorphous silicon is a factor of 3 less even though the defect density increase is greater than in hydrogenated material having equivalent as-deposited properties. Consequent changes in the average recombination cross section of the defects is illustrated. Since the differences in the light soaking behavior upon isotopic substitution has been found to disappear in films deposited at low temperatures, the changes are thought to arise from differences in the silicon network occurring during growth.

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页码：3738 / 3740

页数：3

相关论文

共 19 条

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].

ADLER, D .

PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758

[2]

ADLER D, 1981, J PHYS, V42, pC4

[3] CRITICAL COMPARISON OF LIGHT-INDUCED-CHANGES IN SUB-BAND-GAP ABSORPTION AND PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J].

BHATTACHARYA, E ;

MAHAN, AH ;

CRANDALL, RS ;

PANKOVE, JI .

APPLIED PHYSICS LETTERS, 1989, 54 (13) :1247-1249

[4] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[5] TEMPERATURE-DEPENDENT CREATION OF LIGHT-INDUCED DEFECTS IN A-SI-H SCHOTTKY-BARRIER DIODES [J].

GLADE, A ;

BEICHLER, J ;

MELL, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :397-400

[6] DOMINANT RECOMBINATION PROCESS IN AMORPHOUS-SILICON ALLOYS [J].

GUHA, S ;

HACK, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1683-1685

[7] LIGHT-INDUCED EFFECTS IN AMORPHOUS-SILICON ALLOYS - DESIGN OF SOLAR-CELLS WITH IMPROVED STABILITY [J].

GUHA, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1451-1460

[8] STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J].

HAN, D ;

FRITZSCHE, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :397-400

[9] OPTICALLY AND THERMALLY INDUCED REVERSIBLE CHANGES OF MIDGAP STATES IN UNDOPED A-SI-H [J].

MATSUURA, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :609-611

[10] LIMITATIONS OF THE INTEGRATED SUB-BAND-GAP ABSORPTION FOR DETERMINING THE DENSITY OF DEFECTS IN AMORPHOUS-SILICON [J].

NOBILE, G ;

MCMAHON, TJ .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :578-580