RAMAN-SCATTERING STUDY OF GAP/INP STRAINED-LAYER SUPERLATTICES

被引：15

作者：

ALONSO, MI

CASTRILLO, P

ARMELLES, G

RUIZ, A

RECIO, M

BRIONES, F

机构：

[1] Centro Nacional de Microelectrnica, 28006 Madrid

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.45.9054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss the first-order Raman spectra of short-period GaP/InP strained-layer superlattices grown by atomic-layer molecular-beam epitaxy on {001} GaAs substrates. Experimental spectra are successfully explained and compared to the results of simulations consisting of a linear-chain-method calculation combined with the bond-polarizability model.

引用

页码：9054 / 9058

页数：5

共 28 条

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