RAMAN AND INFRARED PHONON PIEZOSPECTROSCOPY IN INP

被引：33

作者：

ANASTASSAKIS, E

RAPTIS, YS

HUNERMANN, M

RICHTER, W

CARDONA, M

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-5100 AACHEN,FED REP GER

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.38.7702

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7702 / 7709

页数：8

共 34 条

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[7] ANGULAR-DISPERSION OF BACKWARD RAMAN-SCATTERING - ABSORBING III-V SEMICONDUCTORS (GAAS)
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2924 - 2931
[8] Annastassakis E., 1985, P 4 INT SCH ISPPM, P128
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