RAMAN PIEZOSPECTROSCOPIC STUDY OF INDIUM-HARDENED GAAS

被引：7

作者：

ANASTASSAKIS, E

CARDONA, M

机构：

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 64卷 / 04期

关键词：

D O I：

10.1016/0038-1098(87)90777-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：543 / 547

页数：5

共 31 条

[1] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON
ANASTASSAKIS, E
PINCZUK, A
BURSTEIN, E
POLLAK, FH
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 133 - +
[2] EFFECTS OF STRAINS ON THE DYNAMIC EFFECTIVE CHARGE OF III-V-SEMICONDUCTORS
ANASTASSAKIS, E
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 129 (01): : 101 - 116
[3] IONIC PHOTOELASTICITY OF GAAS
ANASTASSAKIS, E
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (17): : 3329 - 3348
[4] ANASTASSAKIS E, UNPUB INP
[5] Anastassakis E. M., 1980, Dynamical properties of solids, vol.4. Disordered solids, optical properties, P157
[6] EFFECT OF UNIAXIAL STRESS AND DOPING ON ONE-PHONON RAMAN-SPECTRUM OF GAP
BALSLEV, I
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 61 (01): : 207 - 213
[7] LOW DISLOCATION, SEMI-INSULATING IN-DOPED GAAS CRYSTALS
BARRETT, DL
MCGUIGAN, S
HOBGOOD, HM
ELDRIDGE, GW
THOMAS, RN
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 179 - 184
[8] STRESS DEPENDENCE OF RAMAN FREQUENCIES AND ELASTIC-CONSTANTS OF CUBIC SEMICONDUCTORS
BELL, MI
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 53 (02): : 675 - &
[9] DEFORMATION POTENTIALS OF K = 0 STATES OF TETRAHEDRAL SEMICONDUCTORS
BLACHA, A
PRESTING, H
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1984, 126 (01): : 11 - 36
[10] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
CERDEIRA, F
BUCHENAUER, CJ
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

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