HYDROGEN INTERACTION WITH SEMICONDUCTOR SURFACES

被引：41

作者：

SCHAEFER, JA

机构：

来源：

SURFACE SCIENCE | 1986年 / 178卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90284-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：90 / 100

页数：11

相关论文

共 36 条

[1] DIPOLE ACTIVITY OF SURFACE PHONONS ON SI(111)2X1
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[7] THE EFFECT OF HYDROGEN CHEMISORPTION ON GAAS(100) AND GAAS(1BAR1BAR1BAR)
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[8] MONO-HYDRIDE AND DIHYDRIDE PHASES ON SILICON SURFACES - A COMPARATIVE-STUDY BY EELS AND UPS
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[J]. SURFACE SCIENCE, 1984, 147 (2-3) : 343 - 348
[9] NEW ORDERED STRUCTURE FOR THE H-SATURATED SI(100) SURFACE - THE (3X1) PHASE
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[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (10) : 1055 - 1058
[10] REEXAMINATION OF THE SI(100) SURFACE RECONSTRUCTION
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[J]. APPLIED OPTICS, 1980, 19 (23): : 3971 - 3973

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