NOVEL SELF-ALIGNED POLYSILICON-GATE MOSFETS WITH POLYSILICON SOURCE AND DRAIN

被引：5

作者：

MORAVVEJFARSHI, MK

GREEN, MA

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 10期

关键词：

D O I：

10.1016/0038-1101(87)90099-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1053 / 1062

页数：10

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[7] NOVEL NMOS TRANSISTORS WITH NEAR-ZERO DEPTH CONDUCTOR THIN INSULATOR SEMICONDUCTOR (CIS) SOURCE AND DRAIN JUNCTIONS [J].

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