NOVEL NMOS TRANSISTORS WITH NEAR-ZERO DEPTH CONDUCTOR THIN INSULATOR SEMICONDUCTOR (CIS) SOURCE AND DRAIN JUNCTIONS

被引：4

作者：

MORAVVEJFARSHI, MK

GREEN, MA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 08期

关键词：

D O I：

10.1109/EDL.1986.26444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：474 / 476

页数：3

共 10 条

[1] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J].

BREWS, JR ;

FICHTNER, W ;

NICOLLIAN, EH ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1980, 1 (01) :2-4

[2] 655-MV OPEN-CIRCUIT VOLTAGE, 17.6-PERCENT EFFICIENT SILICON MIS SOLAR-CELLS [J].

GODFREY, RB ;

GREEN, MA .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :790-793

[3] SUPER-GAIN SILICON MIS HETEROJUNCTION EMITTER TRANSISTORS [J].

GREEN, MA ;

GODFREY, RB .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :225-227

[4] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

[5] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J].

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1613-1616

[6] EFFECTIVENESS OF POLYCRYSTALLINE SILICON DIFFUSION SOURCES [J].

JOSQUIN, WJMJ ;

BOUDEWIJN, PR ;

TAMMINGA, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :960-962

[7] GROOVED GATE MOSFET [J].

NISHIMATSU, S ;

KAWAMOTO, Y ;

MASUDA, H ;

HORI, R ;

MINATO, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :179-183

[8] EFFECTS OF SURFACE TREATMENTS ON THE ELECTRICAL CHARACTERISTICS OF BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS [J].

SOEROWIRDJO, B ;

ASHBURN, P .

SOLID-STATE ELECTRONICS, 1983, 26 (05) :495-498

[9]

Sze S. M., 1981, PHYSICS SEMICONDUCTO

[10] HIGH-GAIN BIPOLAR-TRANSISTORS WITH POLYSILICON TUNNEL JUNCTION EMITTER CONTACTS [J].

VANHALEN, P ;

PULFREY, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1307-1313

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