GROOVED GATE MOSFET

被引：14

作者：

NISHIMATSU, S ^{[1
]}

KAWAMOTO, Y ^{[1
]}

MASUDA, H ^{[1
]}

HORI, R ^{[1
]}

MINATO, O ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：179 / 183

页数：5

共 7 条

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[2]

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[4] SHORT CHANNEL MOS-IC BASED ON ACCURATE 2 DIMENSIONAL DEVICE DESIGN [J].

HORI, R ;

MASUDA, H ;

MINATO, O ;

NISHIMATSU, S ;

SATO, K ;

KUBO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :193-199

[5]

MAEDA K, 1971, IEDM

[6] POLYSILICON SOURCE AND DRAIN MOS-TRANSISTOR (PSD MOST) [J].

MIDDELHOEK, J ;

KOOY, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) :523-525

[7] DEVICE DESIGN CONSIDERATIONS FOR ION-IMPLANTED N-CHANNEL MOSFETS [J].

RIDEOUT, VL ;

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LEBLANC, A .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1975, 19 (01) :50-59

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