MAGNETIC-FIELDS AND STABILITY OF CHARGE-DENSITY-WAVE GROUND-STATES IN SILICON INVERSION LAYERS

被引：2

作者：

KELLY, MJ ^{[1
]}

FALICOV, LM ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 24卷 / 08期

关键词：

D O I：

10.1016/0038-1098(77)90157-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：535 / 537

页数：3

共 14 条

[1] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J].

ANDO, T .

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[2]

Ashcroft N. W, 1976, SOLID STATE PHYS

[3]

DORDA G, 1976, P INT C APPLICATION, P113

[4] SURFACE QUANTUM OSCILLATIONS IN (100) INVERSION LAYERS UNDER UNIAXIAL STRESS [J].

EISELE, I ;

GESCH, H ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1976, 18 (06) :743-746

[5] EFFECTIVE MASSES IN (100) SILICON INVERSION LAYERS [J].

EISELE, I ;

GESCH, H ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1977, 22 (03) :185-188

[6]

ENGLERT T, TO BE PUBLISHED

[7] ELECTRONIC GROUND-STATE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW B, 1977, 15 (04) :1974-1982

[8] ELECTRONIC-STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW LETTERS, 1976, 37 (15) :1021-1024

[9] APPLIED STRESSES, CYCLOTRON MASSES AND CHARGE-DENSITY-WAVES IN SILICON INVERSION LAYERS [J].

KELLY, MJ ;

FALICOV, LM .

SOLID STATE COMMUNICATIONS, 1977, 22 (07) :447-450

[10]

KELLY MJ, TO BE PUBLISHED

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