SEMICONDUCTOR MONO-CRYSTALS OF (PB0.8SN0.2)TE GROWN BY TRAVELING SOLVENT METHOD

被引：5

作者：

BANSARAGTSCHIN, B

LINK, R

LEHMANN, G

机构：

[1] HUMBOLDT UNIV, BEREICH EXPTL HALBLEITERPHYS, DDR-104 Berlin, GERMANY

[2] MONGOLIAN STATE UNIV, PHYS SECT, ULAN BATOR, MONGOLIA

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1978年 / 13卷 / 03期

关键词：

D O I：

10.1002/crat.19780130306

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：269 / 279

页数：11

共 17 条

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[3]

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[5]

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CLARKE, JE .

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[7] TERNARY PHASE-DIAGRAM AND LIQUID-PHASE EPITAXY OF PB-SN-SE AND PB-SN-TE [J].

LAUGIER, A ;

CADOZ, J ;

FAURE, M ;

MOULIN, M .

JOURNAL OF CRYSTAL GROWTH, 1974, 21 (02) :235-242

[8]

LOZOVSKI, 1972, ZONNAJA PLAVKA GRADI

[9] ISOTHERMIC MELT-DROP METHOD FOR PRODUCTION OF LARGE, SUPERPURE AND HOMOGENEOUS LEAD-TIN TELLURIDE MONOCRYSTALS FROM VAPOR PHASE [J].

MATEIKA, D .

JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :249-+

[10]

MLAVSKY AI, 1974, CRYSTAL GROWTH THEOR

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