INVESTIGATIONS OF LIINSE2 EPITAXIAL LAYERS ON (100)-ORIENTED AND (110)-ORIENTED SUBSTRATES WITH SPHALERITE STRUCTURE BY MEANS OF RHEED

被引：5

作者：

TEMPEL, A

SCHUMANN, B

MITARAY, S

KUHN, G

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 11期

关键词：

D O I：

10.1002/crat.2170211111

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1429 / 1435

页数：7

共 12 条

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[7] THE INFLUENCE OF THE LATTICE MISFIT ON THE GROWTH OF CUGASE2 EPITAXIAL-FILMS ON (100)-ORIENTED GAAS AND GAP SUBSTRATES [J].

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[8] DETERMINATION OF THE INTERFACE STRUCTURE OF AGGASE2/(100)-GAAS EPITAXIAL LAYERS BY MEANS OF RHEED AND ETCHING METHODS [J].

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[9] LIINSE2 THIN EPITAXIAL-FILMS ON (111)A-ORIENTED GAAS [J].

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[10] STRUCTURAL INVESTIGATIONS OF CUINSE2 EPITAXIAL LAYERS ON [110]-ORIENTED AND [100]-ORIENTED GAAS SUBSTRATES [J].

TEMPEL, A ;

SCHUMANN, B ;

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