ELECTRIC-FIELD EFFECT ON THE ARTIFICIAL GRAIN-BOUNDARY OF BICRYSTAL YBA2CU3O7-DELTA FILMS

被引：27

作者：

NAKAJIMA, K

YOKOTA, K

MYOREN, H

CHEN, J

YAMASHITA, T

机构：

[1] Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.109929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ability of the artificial grain boundary of bicrystal YBa2Cu3O7-delta thin films is demonstrated as the field effect channel of high T(c) field effect devices. The influence of field application on the channel resistance is examined with a metal-insulator-semiconductor-type structure, in which a channel is arranged across the grain boundary. The field-induced change in the resistance of the grain boundary is enhanced up to around 5% by lowering temperature below T(c) of adjoining YBa2Cu3O7-delta grains. The enhancement is explained not only by an increase in the dielectric constant of the gate insulator (SrTiO3) but also by a reduction in the carrier density nearby the grain boundary. The latter is indeed a benefit to high T(c) field effect devices.

引用

页码：684 / 686

页数：3

共 9 条

[1] Possible Three-Terminal Device with YBCO Angle Grain Boundary [J].

Chen, J. ;

Yamashita, T. ;

Sasahara, H. ;

Suzuki, H. ;

Kurosawa, H. ;

Hirotsu, Y. .

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1991, 1 (02) :102-107

[2] METAL-INSULATOR-SUPERCONDUCTOR FIELD-EFFECT-TRANSISTOR USING SRTIO3 YBA2CU3OY HETEROEPITAXIAL FILMS [J].

FUJII, T ;

SAKUTA, K ;

AWAJI, T ;

MATSUI, K ;

HIRANO, T ;

OGAWA, Y ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B) :L612-L615

[3] ELECTRIC-FIELD EFFECT ON THE AL-MGO-YBA2CU3OY STRUCTURE [J].

KABASAWA, U ;

ASANO, K ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (01) :L86-L88

[4] ELECTRIC-FIELD EFFECT ON SUPERCONDUCTING YBA2CU3O7-DELTA FILMS [J].

MANNHART, J ;

BEDNORZ, JG ;

MULLER, KA ;

SCHLOM, DG .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1991, 83 (03) :307-311

[5]

Takagi H., 1988, JPN J APPL PHYS, V6, P171

[6] EFFECTS OF FIELD-INDUCED HOLE-DENSITY MODULATION ON NORMAL-STATE AND SUPERCONDUCTING TRANSPORT IN YBA2CU3O7-X [J].

XI, XX ;

DOUGHTY, C ;

WALKENHORST, A ;

KWON, C ;

LI, Q ;

VENKATESAN, T .

PHYSICAL REVIEW LETTERS, 1992, 68 (08) :1240-1243

[7] VOLTAGE-CURRENT CHARACTERISTICS OF A HIGH-TC SUPERCONDUCTING FIELD-EFFECT DEVICE [J].

XI, XX ;

DOUGHTY, C ;

WALKENHORST, A ;

MAO, SN ;

LI, Q ;

VENKATESAN, T .

APPLIED PHYSICS LETTERS, 1992, 61 (19) :2353-2355

[8]

XI XX, 1991, APPL PHYS LETT, V59, P3437

[9]

YOSHIDA A, 1991, APPL PHYS LETT, V59, P298

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