VOLTAGE-CURRENT CHARACTERISTICS OF A HIGH-TC SUPERCONDUCTING FIELD-EFFECT DEVICE

被引：36

作者：

XI, XX ^{[1
]}

DOUGHTY, C ^{[1
]}

WALKENHORST, A ^{[1
]}

MAO, SN ^{[1
]}

LI, Q ^{[1
]}

VENKATESAN, T ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLL PK,MD 20742

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 19期

关键词：

D O I：

10.1063/1.108241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The source-drain voltage-current characteristics of a high T(c) field-effect device consisting of a YBa2Cu3O7-x/SrTiO3/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 angstrom thick YBa2Cu3O7-x. channel layer (T(c) = 43 K) with a high critical current density J(c) (5 K) over 1 X 10(5) A/cm2. A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.

引用

页码：2353 / 2355

页数：3

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