EFFECTIVE ELECTRON MASS IN GAAS/ALXGA1-XAS HETEROSTRUCTURES UNDER HYDROSTATIC-PRESSURE

被引：9

作者：

DELANGE, W

BLOM, FAP

WOLTER, JH

机构：

[1] Dept. of Phys., Eindhoven Univ. of Technol.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 03期

关键词：

D O I：

10.1088/0268-1242/8/3/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have determined the effective electron mass in a GaAs/A10.33Ga0.67As heterostructure from the temperature dependence of the amplitude of the Shubnikov-de Haas oscillations. The effective mass is expected to increase with increasing electron concentration due to the non-parabolicity of the conduction band. The effective mass will also increase when we apply a hydrostatic pressure. We evaluated the effective mass in our sample at different electron concentrations and different hydrostatic pressures and have shown that the experimental values fit very well with the theoretically predicted values.

引用

收藏

页码：341 / 343

页数：3

相关论文

共 9 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) :3893-3899

[3] PRESSURE-DEPENDENCE OF THE CYCLOTRON MASS IN N-GAAS-GAAIAS HETEROJUNCTIONS BY FIR EMISSION AND TRANSPORT EXPERIMENTS [J].

CHAUBET, C ;

RAYMOND, A ;

KNAP, W ;

MUIOT, JY ;

BAJ, M ;

ANDRE, JP .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (03) :160-164

[4] DENSITY AND MAGNETIC-FIELD DEPENDENCES OF THE CONDUCTIVITY OF TWO-DIMENSIONAL ELECTRON-SYSTEMS [J].

ISIHARA, A ;

SMRCKA, L .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (34) :6777-6789

[5] 2-DIMENSIONAL ELECTRON-GAS IN GAAS/AL1-XGAXAS HETEROSTRUCTURES - EFFECTIVE MASS [J].

LO, I ;

MITCHEL, WC ;

PERRIN, RE ;

MESSHAM, RL ;

YEN, MY .

PHYSICAL REVIEW B, 1991, 43 (14) :11787-11790

[6] HYDROSTATIC-PRESSURE CONTROL OF THE CARRIER DENSITY IN GAAS GAALAS HETEROSTRUCTURES - ROLE OF THE METASTABLE DEEP LEVELS [J].

MERCY, JM ;

BOUSQUET, C ;

ROBERT, JL ;

RAYMOND, A ;

GREGORIS, G ;

BEERENS, J ;

PORTAL, JC ;

FRIJLINK, PM ;

DELESCLUSE, P ;

CHEVRIER, J ;

LINH, NT .

SURFACE SCIENCE, 1984, 142 (1-3) :298-305

[7] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

STERN, F .

PHYSICAL REVIEW B, 1972, 5 (12) :4891-&

[8] THE PRESSURE-DEPENDENCE OF THE EFFECTIVE MASS IN A GAAS/ALGAAS HETEROJUNCTION [J].

WARBURTON, RJ ;

WATTS, M ;

NICHOLAS, RJ ;

HARRIS, JJ ;

FOXON, CT .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (06) :787-792

[9]

ZHOU W, 1990, 4 P INT C HIGH PRESS