EFFECTS OF OXYGEN ADDED TO REAGENT GAS ON CHEMICAL-VAPOR-DEPOSITION OF DIAMOND THIN-FILMS

The microwave-plasma-assisted chemical vapor deposition (CVD) of diamond film with (H-2 + CO + O2) gaseous source revealed increasing net growth rate with O2 addition up to 0. 5 %, although the etching rate itself markedly increased with O2. T6 understand the effect of oxygen on CVD, we have proposed a possible model for diamond surface reaction, a modified Harris model [Appl. Phys. Lett. 56 (1990) 2298], by taking into account the forced hydrogen abstraction from the surface structure associated with chemical reaction with OH species. Our model, though still slightly rough, explained to a certain extent the observed increase in the diamond growth rate upon oxygen addition.