EFFECTS OF OXYGEN ADDITION ON DIAMOND FILM GROWTH BY ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA CVD APPARATUS

被引：31

作者：

NUNOTANI, M

KOMORI, M

YAMASAWA, M

FUJIWARA, Y

SAKUTA, K

KOBAYASHI, T

NAKASHIMA, S

MINOMO, S

TANIGUCHI, M

SUGIYO, M

机构：

[1] DAIHEN CORP, YODOGAWA KU, OSAKA 532, JAPAN

[2] OSAKA UNIV, FAC ENGN, SUITA, OSAKA 565, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 7A期

关键词：

DIAMOND THIN FILM; ECR PLASMA CVD; CATHODE LUMINESCENCE; SURFACE MORPHOLOGY;

D O I：

10.1143/JJAP.30.L1199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond thin films have been grown by an electron-cyclotron-resonance (ECR) microwave plasma chemical vapor deposition (CVD) apparatus under the addition of oxygen to the host ambient gas of a mixture of CO and H-2 gas. Although the amount of oxygen was very minute (0-6% vol. fraction), significant changes due to the oxygen were brought about in the growth properties and the film crystallinity. The Raman spectroscopy revealed a dramatically improved film crystallinity and the film was dominated by the grain growth, resulting in the faceted morphology. With increase in the oxygen up to 4.55%, the visible cathodeluminescence (CL) intensity grew by more than ten times. However, the CL spectrum indicated an appearance of one or two extra recombination centers depending on the amount of oxygen.

引用

页码：L1199 / L1202

页数：4

共 10 条

[1] RAPID GROWTH OF DIAMOND FILMS BY ARC-DISCHARGE PLASMA CVD [J].