NOISE IN DOUBLE-INJECTION SPACE-CHARGE-LIMITED DIODES

被引：24

作者：

LIU, ST

YAMAMOTO, S

VANDERZI.A

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 10卷 / 11期

关键词：

D O I：

10.1063/1.1754823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：308 / +

页数：1

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[1] HSU ST, 1967, SOLID STATE ELECTRON, V10, P129
[2] THERMAL NOISE IN SPACE-CHARGE-LIMITED SOLID STATE DIODES
LIU, ST
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 253 - &
[3] NOISE SUPPRESSION IN A DOUBLE-INJECTION SILICON DIODE
NICOLET, MA
BILGER, HR
MCCARTER, ER
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 434 - &
[4] CHARACTERISTICS OF THE SPACE-CHARGE-LIMITED DIELECTRIC DIODE AT VERY HIGH FREQUENCIES
SHAO, J
WRIGHT, GT
[J]. SOLID-STATE ELECTRONICS, 1961, 3 (3-4) : 291 - 303
[5] HIGH-FREQUENCY ADMITTANCE OF SPACE-CHARGE-LIMITED SOLID-STATE DIODES
VANDERZIEL, A
HSU, ST
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (09): : 1194 - +
[6] TRANSIT TIME EFFECTS IN SPACE-CHARGE-LIMITED SILICON MICROWAVE DIODE
WRIGHT, GT
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 1 - &