TRANSMISSION-LINE MODELING OF SUBSTRATE RESISTANCES AND CMOS LATCHUP

被引：11

作者：

TROUTMAN, RR

HARGROVE, MJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 07期

关键词：

D O I：

10.1109/T-ED.1986.22600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：945 / 954

页数：10

共 12 条

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[4]

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SHAFER, BD .

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GROVE AS, 1967, PHYS TECHNOL S, P78

[7] A DISCUSSION OF THE ROLE OF DISTRIBUTED EFFECTS IN LATCH-UP [J].

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DRESSENDORFER, PV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4292-4294

[8] LATCH-UP CONTROL IN CMOS INTEGRATED-CIRCUITS [J].

OCHOA, A ;

DAWES, W ;

ESTREICH, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5065-5068

[9]

PAYNE RS, 1980, DEC IEDM, P248

[10]

RABURN WD, 1980, DEC IEDM, P252

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